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WSD20L50DN Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

Part # WSD20L50DN
Description  N-Ch MOSFET
PDF  6 Pages
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Manufacturer  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Direct Link  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSD20L50DN Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-
20
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.0232
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-
4.5V , ID=-10A
---
9
11
m
Ω
VGS=-
2.5V , ID=-8A
---
11
15
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =-250uA
-
0.5
---
-
1.0
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
4.6
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=-
16V , VGS=0V , TJ=25℃
---
---
-1
uA
VDS=-
16V , VGS=0V , TJ=55℃
---
---
-5
IGSS
Gate-Source Leakage Current
VGS=±
12V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-
10A
---
13
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
9
---
Ω
Qg
Total Gate Charge (-4.5V)
VDS=-1
0V , VGS=-4.5V , ID=-11A
---
25
---
nC
Qgs
Gate-Source Charge
---
1.6
---
Qgd
Gate-Drain Charge
---
11
---
Td(on)
Turn-On Delay Time
VDD=-1
0V , VGS=-4.5V ,
RG=
6Ω ID=-1A ,RL=15Ω
---
9
---
ns
Tr
Rise Time
---
13
---
Td(off)
Turn-Off Delay Time
---
26
---
Tf
Fall Time
---
167
---
Ciss
Input Capacitance
VDS=-1
0V , VGS=0V , f=1MHz
---
1620
---
pF
Coss
Output Capacitance
---
320
---
Crss
Reverse Transfer Capacitance
---
290
---
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
VG=VD=0V , Force Current
---
---
-
10
A
ISM
Pulsed Source Current
2,6
---
---
-
40
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=-1A , TJ=25℃
---
---
-1
V
trr
Reverse Recovery Time
IF=-
20A
,dI/dt=100A/µs, T
J=25℃
63
---
nS
Qrr
Reverse Recovery Charge
---
54
---
nC
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper
,t≦10sec.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.
5mH,IAS=-18A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Diode Characteristics
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
WSD20L50DN
Page 2
www.winsok.tw
Dec.2014
---
-
P-Ch MOSFET



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