HMS7N80F datasheet(2/3 Pages) HMSEMI

2 / 3 page

◎ SEMIHOW REV.A0,November 2019

Electrical Characteristics T

J=25 C unless otherwise specified

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

On Characteristics

VGS

Gate Threshold Voltage

VDS = VGS, ID = 220 μA

2.0

4.0

RDS(ON)

Static Drain-Source On-Resistance

VGS = 10 V, ID = 1.6 A

0.74

0.85

Ω

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 1mA

800

IDSS

Zero Gate Voltage Drain Current

VDS = 800 V, VGS = 0

μA

VDS = 800 V, TC = 150℃

100

μA

IGSS

Gate-Body Leakage Current

VGS = ±20 V, VDS = 0 V

μA

Dynamic Characteristics

Ciss

Input Capacitance

VDS = 500 V, VGS = 0 V,

f = 1.0 MHz

564

Coss

Output Capacitance

13.6

Crss

Reverse Transfer Capacitance

2.1

Switching Characteristics

td(on)

Turn-On Time

VDS = 400 V, ID = 2.8 A,

RG = 25 Ω

(Note 3,4)

Turn-On Rise Time

td(off)

Turn-Off Delay Time

Turn-Off Fall Time

Qg(

Total Gate Charge

VDS = 640 V, ID = 2.8 A,

VGS = 10 V

(Note 3,4)

13.7

Qgs

Gate-Source Charge

2.5

Qgd

Gate-Drain Charge

4.3

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

7.0

ISM

Maximum Pulsed Drain-Source Diode Forward Current

VSD

Drain-Source Diode Forward Voltage

VGS = 0 V, IS = 2.8 A

1.3

trr

Reverse Recovery Time

VR = 400 V, IF = 2.8 A

diF/dt = 100 A/μs

230

Qrr

Reverse Recovery Charge

1.7

μC

Notes :

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. IAS=1.15A VDD=50V, RG=25, Starting TJ =25C

3. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%

4. Essentially Independent of Operating Temperature

HMS7N80F

HMS7N80F Datasheet(PDF) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

HMS7N80F Datasheet(HTML) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

Html Pages

1 2 3

Datasheet Download

Link URL