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WSF12N10 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSF12N10 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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2 / 6 page  Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.098 --- V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V , ID= 5A --- 175 220 m Ω VGS=4.5V , ID= 2A --- 220 310 m Ω VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 1.8 2. 4 V △ VGS(th) VGS(th) Temperature Coefficient --- -4.57 --- mV/℃ IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=80V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ± 100 nA gfs Forward Transconductance VDS=5V , ID= 5A --- 13 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2 4 Ω Qg Total Gate Charge (10V) VDS= 50V , VGS=10V , ID=5A 6.0 9.5 13 nC Qgs Gate-Source Charge 1.3 1.9 2.5 Qgd Gate-Drain Charge 1.0 2.1 3.1 Td(on) Turn-On Delay Time VDD= 30V , VGS=10V , RG=6Ω ID=1A , RL=30Ω --- 11 21 ns Tr Rise Time --- 10 19 Td(off) Turn-Off Delay Time --- 21 39 Tf Fall Time --- 13 24 Ciss Input Capacitance VDS= 30V , VGS=0V , f=1MHz 440 pF Coss Output Capacitance 36 Crss Reverse Transfer Capacitance 20 Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 VDD=25V , L=0. 5mH , IAS=3A 10 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- 3 A ISM Pulsed Source Current 2,6 --- --- 9 A VSD Diode Forward Voltage 2 VGS=0V , IS= 3A , TJ=25℃ --- --- 1. 1 V trr Reverse Recovery Time IF= 5A , dI/dt=100A/µs , TJ=25℃ 25 36 47 nS Qrr Reverse Recovery Charge 34 49 64 nC Diode Characteristics Guaranteed Avalanche Characteristics Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper ,t≦10sec. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0. 5mH,IAS=3A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) N-Ch MOSFET Page 2 www.winsok.tw Dec.2014 WSF12N10 --- --- --- --- --- --- |
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