Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

Preview PDF HTML

WSF18N15 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

Part # WSF18N15
Description  N-Ch MOSFET
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Direct Link  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSF18N15 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WSF18N15 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF18N15 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF18N15 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF18N15 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF18N15 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
150
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.098
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V , ID=
10A
---
95
105
m
Ω
VGS=
4.5V , ID=10A
---
105
115
m
Ω
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.2
---
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-4.57
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=
120V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=
120V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±2
0V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=
10A
---
33
---
S
Qg
Total Gate Charge (10V)
VDS=
75V , VGS=4.5V , ID=10A
---
25.1
nC
Qgs
Gate-Source Charge
---
6.8
Qgd
Gate-Drain Charge
---
12.6
Td(on)
Turn-On Delay Time
VDD=
25V , VGS=10V ,
RG=
3.3Ω ID=10A.
---
13
ns
Tr
Rise Time
---
8.2
Td(off)
Turn-Off Delay Time
---
25
Tf
Fall Time
---
11
Ciss
Input Capacitance
VDS=
25V , VGS=0V , f=1MHz
---
2285
pF
Coss
Output Capacitance
---
110
Crss
Reverse Transfer Capacitance
---
83
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
VDD=25V , L=0.
5mH , IAS=6A
15
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
VG=VD=0V , Force Current
---
---
17
A
ISM
Pulsed Source Current
2,6
---
---
40
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=
1A , TJ=25℃
---
---
1.3
V
trr
Reverse Recovery Time
IF=
10A , dI/dt=100A/µs , TJ=25℃
---
37
---
nS
Qrr
Reverse Recovery Charge
---
263
---
nC
Diode Characteristics
Guaranteed Avalanche Characteristics
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
N-Ch MOSFET
Page 2
www.winsok.tw
Rev 1: May.2019
WSF18N15
---
---
---
---
---
---
---
---
---
---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3 .The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.3mH,IAS=18A
4.The power dissipation is limited by 150℃ junction temperature
5 .The data is theoretically the same as ID and IDM , in real applications , should be limited by total power
dissipation.



Html Pages

1 2 3 4 5


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com