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WSF40P03 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

Part # WSF40P03
Description  P-Ch MOSFET
PDF  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Direct Link  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSF40P03 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-30
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.022
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V , ID=-20A
---
15
18
mΩ
VGS=-4.5V , ID=-15A
---
20
26
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =-250uA
-1.2
-1.6
-2.5
V
IDSS
Drain-Source Leakage Current
VDS=-24V , VGS=0V , TJ=25℃
---
---
-1
uA
VDS=-24V , VGS=0V , TJ=55℃
---
---
-5
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
3.5
---
Ω
Qg
Total Gate Charge
---
11
---
nC
Qgs
Gate-Source Charge
---
5
---
Qgd
Gate-Drain Charge
---
5
---
Td(on)
Turn-On Delay Time
---
11
20
ns
Tr
Rise Time
---
10
18
Td(off)
Turn-Off Delay Time
---
39
70
Tf
Fall Time
---
29
53
Cisse
Input Capacitance
---
1256
1633
pF
Cosse
Output Capacitance
---
187
---
Crsse
Reverse Transfer Capacitance
---
115
---
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
-20
A
Diode Forward Voltage
VGS=0V , IS=-1A
---
---
-1.2
V
trr
Reverse Recovery Time
IF=-20A , dI/dt=100A/µs
---
12
---
nS
Qrr
Reverse Recovery Charge
---
3.5
---
nC
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
WSF40P03
P-Ch MOSFET
Page 2
www.winsok.tw
Dec.2014
VGS=0V,
VDS=-15V,
Frequency=1.0MHz
VDD=-15V, RL=15W,
IDS=-1A, VGEN=-10V,
RG=6W
VDS=-15V, VGS=-4.5V,
IDS=-20A
Note d：Pulse test ; pulse width≤300ms, duty cycle≤2%.
Note e：Guaranteed by design, not subject to production testing.
VSD d
d



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