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WSF50P10 Datasheet(PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSF50P10 Datasheet(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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1 / 7 page  Symbol Parameter Rating Units VDS Drain-Source Voltage - 100 V VGS Gate-Sou rce Voltage ± 20 V ID@TC=25℃ Continuous Drain Current, -VGS @ -10V - 34 A ID@TC=100℃ Continuous Drain Current, -VGS @ -10V - 22 A IDM Pulsed Drain Current - 136a A EASc Single Pulse Avalanche Energy 182 mJ IAS c Avalanche Current - 27 A PD@TC=25℃ Total Power Dissipation 96 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA b Thermal Resistance Junction-Ambient --- 60 ℃ /W RθJC Thermal Resistance Junction-Case --- 1.3 ℃ /W BVDSS RDSON ID - 100V 40mΩ - 34A Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available General Description Features Applications Power Management for Industrial DC / DC Converters. Absolute Maximum Ratings Thermal Data TO -252 Pin Configuration Product Summery The WSF50P10 is the highest performance trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSF50P10 meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved. WSF50P10 P-Ch MOSFET Page 1 www.winsok.tw Dec.2014 Note a：Pulse width is limited by max. junction temperature. Note b：Surface Mounted on 1in2 pad area. Note c：UIS tested and pulse width are limited by maximum junction temperature 150oC(initial temperature TJ=25oC). |
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