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WST2035 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WST2035 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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2 / 5 page ![]() Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA - 20 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.01 6 --- V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=-4.5V , ID=- 4.0A --- 37 50 m Ω VGS=-2.5V , ID=- 4.0A --- 45 60 VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -0. 3 -0. 56 -1. 0 V △ VGS(th) VGS(th) Temperature Coefficient --- 3.9 7 --- mV/℃ IDSS Drain-Source Leakage Current VDS=- 20V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=- 20V , VGS=0V , TJ=125℃ --- --- - 30 IGSS Gate-Source Leakage Current VGS=± 10V , VDS=0V --- --- ± 100 nA gfs Forward Transconductance VDS=-5V , ID=-3A 8 16 --- S Qg Total Gate Charge (-4.5V) VDS=- 16V , VGS=-4.5V , ID=-4.0A --- 17.2 --- nC Qgs Gate-Source Charge --- 1.3 --- Qgd Gate-Drain Charge --- 4.5 --- Td(on) Turn-On Delay Time VDD=- 10V , VGEN=-4.5V , RG= 6Ω, ID=-4A --- 9.5 --- ns Tr Rise Time --- 17 --- Td(off) Turn-Off Delay Time --- 94 --- Tf Fall Time --- 35 --- Ciss Input Capacitance VDS=- 10V , VGS=0V , f=1MHz --- 1450 --- pF Coss Output Capacitance --- 205 --- Crss Reverse Transfer Capacitance --- 160 --- Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,4 VG=VD=0V , Force Current --- --- - 1.0 A ISM Pulsed Source Current 2,4 --- --- - 4.0 A VSD Diode Forward Voltage 2 VGS=0V , IS=-1A , TJ=25℃ --- --- -1 .2 V trr Reverse Recovery Time IF=- 4.0A,dI/dt=100A/µs , TJ=25℃ --- 9.5 --- nS Qrr Reverse Recovery Charge --- 94 --- nC Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics WST2035 P-Ch MOSFET Page 2 www.winsok.tw Dec.2014 Notes: . Repetit e rating,pulse width limited by junction temperature. . Puls Test : Pulse width ≤300µs, duty cycle ≤2%. These parameters have no way to verify. 1. 2. 3. |
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