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WST3013 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

Part # WST3013
Description  P-Ch MOSFET
PDF  5 Pages
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Manufacturer  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Direct Link  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WST3013 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-
12
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.014
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-4.5V , ID=-
4.4A
---
38
60
m
Ω
VGS=-2.5V , ID=-
3.5A
---
47
90
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =-250uA
-0.5
-0.
7
-1.
0
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
3.95
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=-
8V , VGS=0V , TJ=25℃
---
---
-1
uA
VDS=-
8V , VGS=0V , TJ=55℃
---
---
-5
IGSS
Gate-Source Leakage Current
VGS=±
8V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-3A
---
8
---
S
Qg
Total Gate Charge (-4.5V)
VDS=-
10V , VGS=-4.5V , ID=-4.4A
---
5.2
---
nC
Qgs
Gate-Source Charge
---
0.7
---
Qgd
Gate-Drain Charge
---
1.8
---
Td(on)
Turn-On Delay Time
VDD=-
10V , VGEN=-4.5V ,
RG=
6Ω, ID=-1A ,RL=10Ω.
---
5.6
---
ns
Tr
Rise Time
---
13.2
---
Td(off)
Turn-Off Delay Time
---
21
---
Tf
Fall Time
---
4.5
---
Ciss
Input Capacitance
VDS=-
10V , VGS=0V , f=1MHz
---
357
---
pF
Coss
Output Capacitance
---
72
---
Crss
Reverse Transfer Capacitance
---
61
---
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,4
VG=VD=0V , Force Current
---
---
-
1
A
ISM
Pulsed Source Current
2,4
---
---
-
17.7
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=-1A , TJ=25℃
---
---
-1
V
trr
Reverse Recovery Time
IF=-
4.4A,dI/dt=100A/µs , TJ=25℃
---
12
---
nS
Qrr
Reverse Recovery Charge
---
6.6
---
nC
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
WST3013
P-Ch MOSFET
Page 2
www.winsok.tw
Dec.2014



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