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2SD596 Datasheet(PDF) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
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2SD596 Datasheet(HTML) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
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1 / 2 page  2SD596 SOT-23 1 / 2 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. y pe ■ Features ● High DC Current gain. ● Complimentary to 2SB624 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 700 mA Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 30 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 25 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 5 Collector-base cut-off current ICBO VCB= 30 V , IE= 0 100 Emitter cut-off current IEBO VEB= 5V , IC=0 100 Collector-emitter saturation voltage (Note.1) VCE(sat) IC=700 mA, IB=70mA 0.6 Base - emitter saturation voltage (Note.1) VBE(sat) IC=700 mA, IB=70mA 1.2 Base - emitter voltage (Note.1) VBE VCE= 6V, IC= 10mA 0.6 0.7 hFE(1) VCE= 1V, IC= 100mA 110 400 hFE(2) VCE= 1V, IC= 700mA 50 Collector output capacitance Cob VCB= 6V, IE= 10mA , f=10MHz 12 pF Transition frequency fT VCE= 6V, IC= 10mA 170 MHz DC current gain (Note.1) V nA V Note.1: Pulse test : Pulse width ≤350μs,Duty Cycle≤2%. ■ Classification of hfe(1) Type 2SD596-DV1 2SD596-DV2 2SD596-DV3 2SD596-DV4 2SD596-DV5 Range 110-180 135-220 170-270 200-320 250-400 Marking DV1 DV2 DV3 DV4 DV5 NPN Transistors 1 2 3 1.Base 2.Emitter 3.Collector ■ Simplified outline(SOT-23) ■ |
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