NTMFS006N08MC

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2

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case – Steady State

1.61

°C/W

Junction−to−Ambient – Steady State (Note 4)

50

Junction−to−Ambient – Steady State (Note 5)

125

5. Surface−mounted on FR4 board using minimum pad size, 2 oz Cu pad.

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

80

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

96.6

mV/°C

Zero Gate Voltage Drain Current

1.0

mA

100

Gate−to−Source Leakage Current

100

nA

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

2.0

4.0

V

Threshold Temperature Coefficient

−5

mV/°C

Drain−to−Source On Resistance

4.9

6.0

mW

Drain−to−Source On Resistance

10.2

17

mW

Gate Resistance

0.3

W

CHARGES AND CAPACITANCES

Input Capacitance

2300

pF

Output Capacitance

710

Reverse Transfer Capacitance

31

Total Gate Charge

30

nC

Threshold Gate Charge

3.3

Gate−to−Source Charge

10

Gate−to−Drain Charge

6.0

SWITCHING CHARACTERISTICS (Note 7)

Turn−On Delay Time

13

ns

Rise Time

4

Turn−Off Delay Time

18

Fall Time

4

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

0.84

1.2

V

0.78

Reverse Recovery Time

49.58

ns

Reverse Recovery Charge

51.4

nC

6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

7. Switching characteristics are independent of operating junction temperatures.