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WST4040 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

Part # WST4040
Description  N-Ch MOSFET
PDF  5 Pages
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Manufacturer  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Direct Link  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WST4040 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy5
VDD=25V , L=0.1mH , IAS=2A
9
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current1,6
VG=VD=0V , Force Current
---
---
1
A
ISM
Pulsed Source Current2,6
---
---
16
A
VSD
Diode Forward Voltage2
VGS=0V , IS=1A , TJ=25℃
---
---
1.2
V
trr
Reverse Recovery Time
IF=2A , dI/dt=100A/µs , TJ=25℃
---
18
---
nS
Qrr
Reverse Recovery Charge
---
70
---
nC
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=2A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Guaranteed Avalanche Characteristics
Diode Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
40
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
---
0.0
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V , ID=3A
---
35
50
mΩ
VGS=4.5V , ID=2A
---
50
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
0.6
1.0
1.6
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
---
---
4.5
mV/℃
IDSS
Drain-Source Leakage Current
--
-
---
-
1
uA
--
-
---
-
5
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
--
-
---
-
±
100
nA
gfs
gf
orwar Tr
d ansconductance
VDS=5V , ID=3A
---
---
18
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.7
---
Ω
Qg
Total Gate Charge (4.5V)
---
---
12.5
nC
Qgs
Gate-Source Charge
---
0.8
3.5
Qgd
Gate-Drain Charge
---
1.65
4.2
Td(on)
Turn-On Delay Time
--
1.5
---
-
4.8
ns
Tr
T
Rise ime
---
42
14
Td(off)
Turn-Off Delay Time
---
18
44
Tf
T
Fall ime
---
5.9
8
Ciss
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
---
---
396
pF
Coss
Output Capacitance
---
47
Crss
Reverse Transfer Capacitance
---
35
60
S
V
---
---
VDS=32V , VGS=0V , TJ=25℃
VDS=32V , VGS=0V , TJ=55℃
VDS=20V , VGS=4.5V , ID=2A
VDD=20V , VGS=10V , RG=3.3Ω
ID=1A
6.5
IF=2A , dI/dt=100A/µs , TJ=25℃
WST4040
Page 2
www.winsok.tw
Dec.2014
N-Ch MOSFET
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