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MMBT5087 Datasheet(PDF) 2 Page - ON Semiconductor |
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MMBT5087 Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 8 page ![]() MMBT5087LT1 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = –100 µAdc, VCE = –5.0 Vdc) (IC = –1.0 mAdc, VCE = –5.0 Vdc) (IC = –10 mAdc, VCE = –5.0 Vdc) hFE 250 250 250 800 — — — Collector–Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) VCE(sat) — –0.3 Vdc Base–Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) VBE(sat) — 0.85 Vdc SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = –500 µAdc, VCE = –5.0 Vdc, f = 20 MHz) fT 40 — MHz Output Capacitance (VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo — 4.0 pF Small–Signal Current Gain (IC = –1.0 mAdc, VCE = –5.0 Vdc, f = 1.0 kHz) hfe 250 900 — Noise Figure (IC = –20 mAdc, VCE = –5.0 Vdc, RS = 10 kΩ, f = 1.0 kHz) (IC = –100 µAdc, VCE = –5.0 Vdc, RS = 3.0 kΩ, f = 1.0 kHz) NF — — 2.0 2.0 dB |
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