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CXT5401 Datasheet(PDF) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
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CXT5401 Datasheet(HTML) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
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1 / 3 page  CXT5401 SOT-89 1 / 3 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. Features High current (max. 500mA). Low voltage (max. 150 V). Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector to base breakdown voltage VCBO IC=-100 A -160 V Collector to emitter breakdown voltage VCEO IC=-1.0mA -150 V Emitter to base breakdown voltage VEBO IE=-10 A -5.0 V VCB =- 120 V, IE =0 -50 nA VCB =- 120 V, TA=100 -50 A IC =-1.0mA; VCE = -5.0 V 50 IC = -10mA; VCE =- 5.0V 60 240 IC =-50 mA;VCE = -5.0V 50 IC =- 10 mA; IB = -1.0mA -0.2 V IC =-50 mA;IB = -5.0mA -0.5 V IC =-10 mA;IB = -1.0mA -1.0 V IC =-50 mA;IB =- 5.0mA -1.0 V Output capacitance Cob VCB =-10 V, IE = 0,f=1.0MHz 6.0 pF Transition frequency fT IC =-10 mA;VCE =-10V; f = 100 MHz 100 300 MHz ICBO Collector cutoff current VCE(sat) Collector to emitter saturation voltage Base to emitter saturation voltage VBE(sat) hFE DC current gain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -160 V Collector-emitter voltage VCEO -150 V Emitter-base voltage VEBO -5 V Collector current (DC) IC -500 mA power dissipation PD 1.2 W thermal resistance Junction- to-ambient R JA 104 /W Junction temperature Tj 150 Storage temperature Tstg -65to+150 1 2 3 ■ Simplified outline(SOT-89) 1.Base 2.Collector 3.Emitter Surface Mount PNP Silicon Transistor |
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