SOD-123 Schottky

Barrier Diodes

The MMSD301T1, and MMSD701T1 devices are spin–offs of our

popular MMBD301LT1, and MMBD701LT1 SOT–23 devices. They

are designed for high–efficiency UHF and VHF detector applications.

Readily available to many other fast switching RF and digital

applications.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Reverse Voltage

MMSD301T1

MMSD701T1

VR

30

70

Vdc

Forward Power Dissipation

TA = 25°C

PF

225

mW

Junction Temperature

TJ

–55 to +125

°C

Storage Temperature Range

Tstg

–55 to +150

°C

DEVICE MARKING

MMSD301T1 = XT, MMSD701T1 = XH

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage

(IR = 10 µA)

MMSD301T1

MMSD701T1

V(BR)R

30

70

—

—

—

—

Volts

Diode Capacitance

(VR = 0, f = 1.0 MHz, Note 1)

MMSD301T1

MMSD701T1

CT

—

—

0.9

0.5

1.5

1.0

pF

Total Capacitance

(VR = 15 Volts, f = 1.0 MHz)

MMSD301T1

(VR = 20 Volts, f = 1.0 MHz)

MMSD701T1

CT

—

—

0.9

0.5

1.5

1.0

pF

Reverse Leakage

(VR = 25 V)

MMSD301T1

(VR = 35 V)

MMSD701T1

IR

—

—

13

9.0

200

200

nAdc

nAdc

Forward Voltage

(IF = 1.0 mAdc)

MMSD301T1

(IF = 10 mA)

(IF = 1.0 mAdc)

MMSD701T1

(IF = 10 mA)

VF

—

—

—

—

0.38

0.52

0.42

0.7

0.45

0.6

0.5

1.0

Vdc

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

ON Semiconductort

© Semiconductor Components Industries, LLC, 2001

September, 2001 – Rev. 2

1

Publication Order Number:

MMSD301T1/D

MMSD301T1

MMSD701T1

CASE 425–04, STYLE 1

SOD–123

1

2

ON Semiconductor Preferred Devices

1

Cathode

2

Anode