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MPS6725 Datasheet(PDF) 2 Page - ON Semiconductor

Part # MPS6725
Description  One Watt Darlington Transistors NPN Silicon
PDF  5 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MPS6725 Datasheet(HTML) 2 Page - ON Semiconductor

  MPS6725 Datasheet HTML 1Page - ON Semiconductor MPS6725 Datasheet HTML 2Page - ON Semiconductor MPS6725 Datasheet HTML 3Page - ON Semiconductor MPS6725 Datasheet HTML 4Page - ON Semiconductor MPS6725 Datasheet HTML 5Page - ON Semiconductor  
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MPS6724, MPS6725
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
MPS6724
MPS6725
V(BR)CES
40
50
−
−
Vdc
Collector −Base Breakdown Voltage
(IC = 1.0 mAdc, IE = 0)
MPS6724
MPS6725
V(BR)CBO
50
60
−
−
Vdc
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
12
−
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
MPS6724
(VCB = 40 Vdc, IE = 0)
MPS6725
ICBO
−
−
100
100
nAdc
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
IEBO
−
100
nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 200 mAdc, VCE = 5.0 Vdc)
(IC = 1000 mAdc, VCE = 5.0 Vdc)
hFE
25,000
4,000
−
40,000
−
Collector −Emitter Saturation Voltage
(IC = 1000 mAdc, IB = 2.0 mAdc)
VCE(sat)
−
1.5
Vdc
Base −Emitter On Voltage
(IC = 1000 mAdc, VCE = 5.0 Vdc)
VBE(on)
−
2.0
Vdc
SMALL− SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 200 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
100
1000
MHz
Collector−Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
−
10
pF
1. Pulse Test: Pulse Width
v 300 ms; Duty Cycle v 2.0%.
TYPICAL CHARACTERISTICS
1.5
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
3.0 k
2.0 k
1.0 k
500
200
20
2.0
5.0
30
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
10
TA = 25°C
TC = 25°C
1.0 ms
1.0 s
100 ms
Figure 1. Active Region — Safe Operating Area
DUTY CYCLE ≤ 10%



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