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PW113 Datasheet(PDF) 1 Page - SJM Prewell. All Rights Reserved. |
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PW113 Datasheet(HTML) 1 Page - SJM Prewell. All Rights Reserved. |
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1 / 4 page ![]() http://www.prewell.com 1 Wideband Amplifier SJM PREWELL PW113 Products and product information are subject to change without notice. Version 0.9 Features • 45 - 1500MHz • Gain 20.5dB @ 45MHz • CSO 60dBc @ 25dBmV • CTB 72dBc @ 25dBmV • NF 3.8dB @ 200MHz • Lead-free / Green / compliant SOT-89 Package Description The PW113 is a high performance InGaP HBT MMIC Amplifier and consists of Darlington pair amplifiers with temperature compensation that is internally matched to 75 Ω input/output. The features of PW113 are high linear performance and high reliability as a CATV amplifier and provide stable current variation over temperature. The PW113 operates from a single voltage supply and requires only two DC-blocking capacitors, a bias resistor and an inductor for operation. The device is a general purpose CATV amplifier that offers high dynamic range in a low cost surface-mounted plastic SOT-89 package. All devices are 100% RF and DC tested. Specifications 1) Test Conditions : T=25°C, Supply Voltage=5V, 75ohm System 2) Note 1. Two Tones, 1MHz Spacing, 5dBm per Tone at Output 3) Note 2. fp=851.25MHz; Vp=Vo; fq=858.25MHz; Vq=Vo-6dB; fr=860.25MHz; Vr=Vo-6dB; measured at fp+fq-fr =849.25MHz 4) Note 3. fp=55.25MHz; Vp=40dBmV, fq=805.25MHz; Vq=40dBmV, measured at fp+fq=860.5MHz Absolute Maximum Ratings Parameter Rating Unit Device Voltage 5 V Device Current 150 mA RF Power Input 10 dBm Storage Temperature -55 to 150 °C Ambient Operating Temperature -40 to 85 °C Junction Temperature 187 °C Parameter Units Typ. Condition S21 dB 20.5 45 ~ 1000MHz S11 dB -10 45 ~ 1000MHz S22 dB -12 45 ~ 1000MHz CSO dBc 60 25dBmV/132ch Flat CTB dBc 72 25dBmV/132ch Flat OIP3 dBm 36.5 Note 1 2) P1dB dBm 19.0 Vo dBmV 57.5 Note 2 3) d2 dBc 60.8 Note 3 4) NF dB 3.8 V / I V / mA 4.7 / 90 Rth °C/W 73 4 1 2 3 ESD/MSL 1 ESD sensitive device. Observe handling precautions. 2 HBM: Class 1C, JESD22-A114 3 CDM: Class C3 , JESD22- C101F 4 MSL 3, J-STD-020 Functional Diagram RF IN GND 1 2,4 RF OUT / Bias 3 1) Stresses above the maximum values listed have may cause permanent damage to the device. 2) MTTF is more than 100 years. Applications • Headend • Drop Amplifier • Cable Modem • Laser Diode Driver • FTTH Receiver • Optical Transmitter • RFoG / MOCA |
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