P0910AS datasheet(2/6 Pages) UNIKC

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P0910AS

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (Tc = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

100

1.5

2.3

4.0

±250

12000

900

500

217

205

190

1.3

220

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

mΩ

TEST CONDITIONS

Drain-Source On-State

Resistance

RDS(ON)

PARAMETER

VDS = 80V, VGS = 0V

VDS = 10V, VGS = 10V

ID(ON)

VGS = 0V, ID = 250mA

SYMBOL

V(BR)DSS

STATIC

On-State Drain Current

VDS = 80V, VGS = 0V , TJ = 125 °C

Drain-Source Breakdown Voltage

Fall Time

Rise Time

Gate-Drain Charge

IF = 50A, VGS = 0V

VDD = 50V, ID @ 50A,

VGS = 10V, RGEN = 25Ω

td(on)

td(off)

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Turn-On Delay Time

Turn-Off Delay Time

Qrr

Reverse Recovery Charge

Continuous Current

Forward Voltage

Reverse Recovery Time

VSD

trr

Reverse Transfer Capacitance

Total Gate Charge

Input Capacitance

Output Capacitance

Qgs

Gate-Source Charge

VDS = 25V, ID = 65A

VGS(th)

Forward Transconductance

gfs

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

IDSS

Zero Gate Voltage Drain Current

VDS = 50V, VGS = 10V, ID = 50A

Ciss

Coss

Crss

Qgd

DYNAMIC

VDS = VGS, ID = 250mA

LIMITS

Gate Threshold Voltage

VGS = 0V, VDS = 25V, f = 1MHz

VGS = 10V, ID = 65A

8.2

9.5

UNIT

Ver 1.0

2013/8/8

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