NC(1)

K(2)

A(3)

NC

K

A

K

Features

•

AEC-Q101 qualified

•

No reverse recovery charge in application current range

•

Switching behavior independent of temperature

•

Recommended to PFC applications

•

PPAP capable

•

Description

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured

using a silicon carbide substrate. The wide band gap material allows the design of a

Schottky diode structure with a 650 V rating. Due to the Schottky construction, no

recovery is shown at turn-off and ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, the STPSC10C065-Y will boost

performance in hard switching conditions.

Product status link

STPSC10C065-Y

Product summary

10 A

650 V

175 °C

Automotive 650 V power Schottky silicon carbide diode

STPSC10C065-Y

Datasheet

DS12402 - Rev 2 - September 2018

For further information contact your local STMicroelectronics sales office.

www.st.com