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MCD161 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # MCD161
Description  Common thyristor and rectifier mixed module
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MCD161 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
MCD161
Common thyristor and rectifier mixed module
FEATURES
·
Electrical insulation of chip and floor
·
Fully crimped structure
·
Excellent temperature characteristics and power cycle capability
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
AC/DC motor control
·
Various rectified power sources
MAIN PARAMETER:
SYMBOL
PARAMETER
CONDITIONS
Tj(℃)
MIN
MAX
UNIT
IT(AV)
Average current
on current
180°half-sinusoid，50HZ
Single side heat
dissipation,TC=85℃
125
165
A
IT(RMS)
Square
rms
current
125
251
A
VDRM
VRRM
Repeat
peak
voltage
repetitive
peak
reverse voltage
VDRM&VRRMtp=10ms
VDSM&VRSM=VDRM&VRRM+200V
125
2000
2200
V
IDRM
IRRM
Recurring Peak
Current
Reverse repeat
peak current
VDM=VDRM, VRM=VRRM
125
25
mA
I
TSM
Inrush current
without repeating
current
10ms half-sinusoid
125
5.4
kA
I
2t
Surge current
squared time
VR=0.6VRRM
125
146
A2S*103
VTM
peak on state
voltage
ITM=480A
25
1.9
V
dv/dt
Critical rising rate
of broken voltage
VDM=67%VDRM,
125
800
V/us
di/dt
Critical rising rate
of on-state current ITM=320A,IGM=1.5A,tr<0.5us
125
100
A/us
I
GT
gate trigger
current
VA=12V,IA=1A
25
30
150
mA
V
GT
gate trigger
voltage
1.0
3.0
V
I
H
stand-by current
20
150
mA


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