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PB210BD Datasheet(PDF) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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PB210BD Datasheet(HTML) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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1 / 5 page  PB210BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. VGS °C / W THERMAL RESISTANCE V ±20 RqJC 62.5 3 Power Dissipation Junction-to-Ambient PD TJ, TSTG TC = 25 °C TC = 100 °C SYMBOL RDS(ON) TC = 100 °C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 230mΩ @V GS = 10V 10A ID 100V Continuous Drain Current Operating Junction & Storage Temperature Range TYPICAL SYMBOL Junction-to-Case IDM Pulsed Drain Current 1 LIMITS -55 to 150 W UNITS 40 10 41 6 mJ Avalanche Engergy L = 0.1 mH Avalanche Current IAS 18 A TC = 25 °C ID EAS 16.5 17 MAXIMUM °C RqJA Rev 1.2 1 2014/5/23 |
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