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IXTH68N20 Datasheet(PDF) 1 Page - IXYS Corporation

Part # IXTH68N20
Description  High Current MegaMOSFET
PDF  2 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTH68N20 Datasheet(HTML) 1 Page - IXYS Corporation

  IXTH68N20 Datasheet HTML 1Page - IXYS Corporation IXTH68N20 Datasheet HTML 2Page - IXYS Corporation  
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© 1998 IXYS All rights reserved
C2 - 14
Symbol Test Conditions
Characteristic Values
(T
J = 25°C unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS = 0 V, ID = 5 mA
200
V
V
GS(th)
V
DS = VGS, ID = 4 mA
2.0
4.0
V
I
GSS
V
GS = ±20 V DC, VDS = 0
±100
nA
I
DSS
V
DS = 0.8 VDSS
T
J = 25°C
500
µA
V
GS = 0 V
T
J = 125°C
3
mA
R
DS(on)
V
GS = 10 V, ID = 0.5 ID25
35 mΩ
Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%
TO-247AD (IXTH)
Features
• Low R
DS (on) HDMOS
TM
process
• Rugged polysilicon gate cell structure
• International standard package
• Fast switching times
Applications
• Motor controls
• DC choppers
• Uninterruptable Power Supplies (UPS)
• Switch-mode and resonant-mode
Advantages
• Easy to mount with one screw
(isolated mounting screw hole)
• Space savings
• High power density
95512C (12/97)
High Current
MegaMOSTMFET
N-Channel Enhancement Mode
IXYS reserves the right to change limits, test conditions and dimensions.
Preliminary data
Symbol
Test conditions
Maximum ratings
V
DSS
T
J
= 25°C to 150°C
200
V
V
DGR
T
J
= 25°C to 150°C; R
GS = 1.0 MΩ
200
V
V
GS
Continuous
±20
V
V
GSM
Transient
±30
V
I
D25
T
C
= 25°C
74N20
74
A
68N20
68
A
I
DM
T
C
= 25°C, pulse width limited by T
JM
74N20
296
A
68N20
272
A
P
D
T
C
= 25°C
74N20
416
W
68N20
300
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
M
d
Mounting torque
1.13/10
Nm/lb.in.
Weight
TO-264
10
g
TO-247
6
g
Max lead temperature for soldering
300
°C
1.6 mm (0.062 in.) from case for 10 s
D (TAB)
V
DSS
I
D25
R
DS(on)
IXTK 74 N20
200 V 74 A 35 mW
IXTH 68 N20
200 V 68 A 35 mW
TO-264 AA (IXTK)
S
G
D
D (TAB)
G = Gate
D
= Drain
S = Source
Tab = Drain


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