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IXTH68N20 Datasheet(PDF) 1 Page - IXYS Corporation |
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IXTH68N20 Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 2 page ![]() © 1998 IXYS All rights reserved C2 - 14 Symbol Test Conditions Characteristic Values (T J = 25°C unless otherwise specified) Min. Typ. Max. V DSS V GS = 0 V, ID = 5 mA 200 V V GS(th) V DS = VGS, ID = 4 mA 2.0 4.0 V I GSS V GS = ±20 V DC, VDS = 0 ±100 nA I DSS V DS = 0.8 VDSS T J = 25°C 500 µA V GS = 0 V T J = 125°C 3 mA R DS(on) V GS = 10 V, ID = 0.5 ID25 35 mΩ Pulse test, t ≤ 300 ms, duty cycle d ≤ 2% TO-247AD (IXTH) Features Low R DS (on) HDMOS TM process Rugged polysilicon gate cell structure International standard package Fast switching times Applications Motor controls DC choppers Uninterruptable Power Supplies (UPS) Switch-mode and resonant-mode Advantages Easy to mount with one screw (isolated mounting screw hole) Space savings High power density 95512C (12/97) High Current MegaMOSTMFET N-Channel Enhancement Mode IXYS reserves the right to change limits, test conditions and dimensions. Preliminary data Symbol Test conditions Maximum ratings V DSS T J = 25°C to 150°C 200 V V DGR T J = 25°C to 150°C; R GS = 1.0 MΩ 200 V V GS Continuous ±20 V V GSM Transient ±30 V I D25 T C = 25°C 74N20 74 A 68N20 68 A I DM T C = 25°C, pulse width limited by T JM 74N20 296 A 68N20 272 A P D T C = 25°C 74N20 416 W 68N20 300 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C M d Mounting torque 1.13/10 Nm/lb.in. Weight TO-264 10 g TO-247 6 g Max lead temperature for soldering 300 °C 1.6 mm (0.062 in.) from case for 10 s D (TAB) V DSS I D25 R DS(on) IXTK 74 N20 200 V 74 A 35 mW IXTH 68 N20 200 V 68 A 35 mW TO-264 AA (IXTK) S G D D (TAB) G = Gate D = Drain S = Source Tab = Drain |
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