MCC161 datasheet(3/3 Pages) IXYS

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MCC 161

MCD 161

100

125

FAVM, ITAVM

tot

100

200

300

400

200

400

600

800

1000

1200

1400

1600

1800

2000

tot

DAVM

thKA K/W

0.02

0.04

0.06

0.1

0.15

0.20

0.30

100 150 200 250

120

160

200

240

280

320

360

400

100

125

0.001

0.01

0.1

1000

2000

3000

4000

5000

6000

VJ =

45°C

VJ = 125°C

110

104

105

106

VJ = 45°C

VJ = 125°C

255075

100

125

100

150

200

250

300

350

TAVM,

180° sin

120° rect

60° rect

30° rect

°C

thJC

10-3

10-2

10-1

100

101

102

0.0

0.1

0.2

0.3

K/W

180°

120°

60°

30°

thKA K/W

0.1

0.2

0.3

0.5

0.8

1.5

180° sin

120° rect

60° rect

30° rect

FAVM

80% V

RRM

50 Hz

TSM,

FSM

Fig. 4: Surge overload current

TSM, IFSM = f(t)

Fig. 5: I2t versus time per diode

Fig. 6: Max. forward current at case

temperature I

TAVM/FAVM = f (TC,d)

Fig. 7: Power dissipation vs. on-state current and ambient

temperature (per thyristor/diode)

Fig. 8: Power dissipation vs. direct output current and

ambient temperature (three phase rectifier bridge)

Fig. 9: Transient thermal impedance junction to case Z

thjC

at various conduction angles

Constants for Z

thJC calculation (DC):

thi (K/W)

i (s)

0.012

0.00014

0.008

0.019

0.03

0.18

0.073

0.52

0.032

1.6

thJC for various condition angles:

thJC (K/W)

DC_

0.155

180°

0.171

120°

0.184

60°

0.222

30°

0.294

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