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PC015BDA Datasheet(PDF) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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PC015BDA Datasheet(HTML) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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1 / 8 page  PC015BDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS °C / W 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. EAS 2.2 12 MAXIMUM °C mJ Avalanche Engergy L = 1 mH Avalanche Current IAS 2.1 -55 to 150 Operating Junction & Storage Temperature Range TC = 25 °C ID IDM Pulsed Drain Current 1,2 LIMITS VGS W UNITS 15 6.4 31 4 V ±20 A TYPICAL SYMBOL Junction-to-Case RqJC 4 SYMBOL RDS(ON) TC = 100 °C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 300mΩ @V GS = 10V 6.4A ID 150V Continuous Drain Current 2 PD TJ, TSTG TC = 25 °C TC = 100 °C THERMAL RESISTANCE Power Dissipation Rev 1.0 1 2018/8/1 |
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