PD5C1BA datasheet(2/8 Pages) UNIKC

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PD5C1BA

P-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

-40

-1.3

-1.8

-2.3

±100

-1

-10

4.3

5.6

5.8

7.8

6668

830

670

3.8

138

291

173

-60

-1.3

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

UNITS

IF = -20A, dlF/dt = 100A /mS

VDS = 0V, VGS = ±25V

IDSS

Coss

Crss

td(off)

VDS = VGS, ID = -250mA

trr

mΩ

IF = -20A, VGS = 0V

Turn-Off Delay Time

Gate-Drain Charge

VDS =-20V ,ID @ -20A,

VGS=-10V,RGEN=6Ω

td(on)

V(BR)DSS

Gate Threshold Voltage

STATIC

Qg(VGS=-4.5V)

Ciss

Qgd

Qgs

Turn-On Delay Time

Drain-Source On-State

Resistance

RDS(ON)

VGS =0V, VDS = 0V, f = 1MHz

Qrr

Reverse Recovery Charge

Continuous Current

Forward Voltage

Reverse Recovery Time

Fall Time

VSD

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Rise Time

Gate-Source Charge

Reverse Transfer Capacitance

Qg(VGS=-10V)

Input Capacitance

Total Gate Charge

VDS =-20V,VGS = -10V,

ID = -20A

Gate Resistance

VGS = 0V, VDS = -20V, f = 1MHz

SYMBOL

Output Capacitance

DYNAMIC

VGS = -4.5V, ID = -15A

VDS =-32V, VGS = 0V

VGS(th)

PARAMETER

Zero Gate Voltage Drain Current

gfs

LIMITS

Gate-Body Leakage

Drain-Source Breakdown Voltage

VGS = 0V, ID = -250mA

IGSS

VDS = -5V, ID = -20A

TEST CONDITIONS

Forward Transconductance

VDS =-30V, VGS = 0V, TJ = 125°C

VGS = -10V, ID = -20A

REV 1.0

2018/3/23

PD5C1BA Datasheet(PDF) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

PD5C1BA Datasheet(HTML) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

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