PD533BA datasheet(2/5 Pages) UNIKC

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PD533BA

P-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

-40

-1

-1.8

-3

±100

-1

-10

2670

313

222

4.5

-50

-1.3

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

3Package limitation current is -40A.

VDS = -5V, ID = -20A

TEST CONDITIONS

Gate-Body Leakage

Forward Transconductance

VDS = -30V, VGS = 0V, TJ = 125°C

VGS =-4.5V, ID =-15A

VGS(th)

VGS = 0V, VDS = -20V, f = 1MHz

SYMBOL

Output Capacitance

DYNAMIC

Qgs

Gate-Source Charge

Reverse Transfer Capacitance

Qg(VGS =-10V)

Input Capacitance

Total Gate Charge

gfs

Rise Time

Qgd

VDS = -20V,ID = -20A

VDS = -32V, VGS = 0V

VGS =-10V, ID =-20A

Fall Time

Turn-On Delay Time

Drain-Source On-State

Resistance

RDS(ON)

Qrr

Reverse Recovery Charge

Continuous Current

Forward Voltage

Reverse Recovery Time

VSD

VDS = VGS, ID = -250mA

VGS = 0V, ID = -250mA

Qg(VGS =-4.5V)

Ciss

Turn-Off Delay Time

Gate-Drain Charge

VDS = -20V ,ID @ -20A,

VGS= -10V,RGEN= 6Ω

td(on)

V(BR)DSS

Gate Threshold Voltage

Gate Resistance

VGS =0V, VDS = 0V, f = 1MHz

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

mΩ

IF = -20A, VGS = 0V

IF = -20A, dlF/dt = 100A /mS

VDS = 0V, VGS = ±25V

IDSS

Coss

Crss

td(off)

trr

PARAMETER

Zero Gate Voltage Drain Current

IGSS

STATIC

Drain-Source Breakdown Voltage

LIMITS

UNITS

REV 1.0

2015/4/9

PD533BA Datasheet(PDF) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

PD533BA Datasheet(HTML) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

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