PI506BZ datasheet(2/5 Pages) UNIKC

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PI506BZ

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

1.2

1.7

±100

5.2

4.2

1800

270

226

0.9

43.3

22.9

6.2

11.3

1.2

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

3Package limitation current is 40A.

Zero Gate Voltage Drain Current

VDS = VGS, ID = 250mA

VDS = 0V, VGS = ±20V

Gate Threshold Voltage

Drain-Source Breakdown Voltage

Drain-Source On-State

Resistance

RDS(ON)

VGS = 4.5V, ID = 15A

mΩ

VDS = 10V, ID = 20A

Forward Transconductance

Output Capacitance

VGS = 0V, VDS = 15V, f = 1MHz

Ciss

Coss

Input Capacitance

DYNAMIC

Crss

Qg(VGS = 10V)

VDS = 15V, ID = 20A

Gate-Source Charge

Gate-Drain Charge

Qgs

Gate Resistance

Reverse Transfer Capacitance

Total Gate Charge

Qg(VGS = 4.5V)

IGSS

IDSS

Gate-Body Leakage

VDS = 20V, VGS = 0V , TJ = 125 °C

VGS = 10V, ID = 20A

VGS(th)

VGS = 0V, ID = 250mA

V(BR)DSS

Qgd

TEST CONDITIONS

gfs

VDS = 24V, VGS = 0V

STATIC

LIMITS

UNITS

PARAMETER

SYMBOL

trr

Qrr

VSD

IF = 20A, dlF/dt = 100A / mS

Reverse Recovery Charge

Continuous Current

Forward Voltage

Turn-On Delay Time

Rise Time

Reverse Recovery Time

Turn-Off Delay Time

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

VDS = 15V, ID @ 20A,

VGS = 10V, RGEN =6Ω

td(off)

td(on)

IF = 20A, VGS = 0V

VGS = 0V, VDS = 0V, f = 1MHz

REV 1.0

2015/3/20

PI506BZ Datasheet(PDF) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

PI506BZ Datasheet(HTML) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

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