PKCP4EB datasheet(2/9 Pages) UNIKC

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PKCP4EB

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

0.6

0.75

1.2

±30

1.5

1.9

1.3

0.9

1.2

145

5920

1118

918

0.9

VGS =10V

151

VGS =4.5V

6.6

118

191

148

1.2

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

Drain-Source On-State

Resistance

RDS(ON)

VGS = 2.5V, ID = 10A

mΩ

VGS = 4.5V, ID = 10A

IF = 15A, dlF/dt = 100A / mS

SYMBOL

V(BR)DSS

TEST CONDITIONS

UNITS

Coss

VDS = 0V, VGS = ±12V

gfs

STATIC

VGS = 0V, VDS = 0V, f = 1MHz

Qgs

DYNAMIC

VDS = 16V, VGS = 0V

IDSS

Qrr

Reverse Recovery Charge

Continuous Current

Forward Voltage

Reverse Recovery Time

VSD

Forward Transconductance

trr

IF = 15A, VGS = 0V

VDS = 10V,

ID @ 15A, VGS = 10V, RGEN = 6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

td(on)

td(off)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Gate Threshold Voltage

Zero Gate Voltage Drain

Current

IGSS

VDS = VGS, ID = 250mA

VGS = 0V, ID = 250mA

Gate Resistance

VDS = 5V, ID = 15A

Total Gate Charge

Ciss

PARAMETER

Output Capacitance

Drain-Source Breakdown

Voltage

VGS = 10V , ID = 15A

VDS = 10V, VGS = 0V, TJ = 55 °C

Qgd

Crss

Input Capacitance

VGS = 0V, VDS = 10V, f = 1MHz

VDS = 10V,

VGS = 10V, ID = 15A

Gate-Drain Charge

Gate-Source Charge

Reverse Transfer Capacitance

Gate-Body Leakage

VGS(th)

LIMITS

REV 1.0

2018/3/29

PKCP4EB Datasheet(PDF) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

PKCP4EB Datasheet(HTML) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

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