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AM29N323D Datasheet(PDF) 29 Page - Advanced Micro Devices

Part # AM29N323D
Description  32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
PDF  48 Pages
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Manufacturer  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29N323D Datasheet(HTML) 29 Page - Advanced Micro Devices

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Am29N323D
August 8, 2002
AC CHARACTERISTICS
Synchronous/Burst Read
Notes:
1. Figure shows total number of wait states set to five cycles. The total number of wait states can be programmed from four
cycles to seven cycles.
2. Figure shows that PS (power saving mode) has been enabled; one additional wait state occurs during initial data Da. Latency
is not present if PS is not enabled.
3. If any burst address occurs at a 64-word boundary, one additional clock cycle is inserted, and is indicated by RDY.
Figure 9.
Burst Mode Read
Parameter
Description
11A
(40 MHz)
Unit
JEDEC
Standard
tIACC
Initial Access Time
Max
120
ns
tBACC
Burst Access Time Valid Clock to Output Delay
Max
20
ns
tAVDS
AVD# Setup Time to CLK
Min
5
ns
tAVDH
AVD# Hold Time from CLK
Min
7
ns
tAVDO
AVD# High to OE# Low
Min
0
ns
tACS
Address Setup Time to CLK
Min
5
ns
tACH
Address Hold Time from CLK
Min
7
ns
tBDH
Data Hold Time from Next Clock Cycle
Max
4
ns
tOE
Output Enable to Data, PS, or RDY Valid
Max
20
ns
tCEZ
Chip Enable to High Z
Max
10
ns
tOEZ
Output Enable to High Z
Max
10
ns
tCES
CE# Setup Time to CLK
Min
5
ns
tRDYS
RDY Setup Time to CLK
Min
5
ns
tRACC
Ready access time from CLK
Max
20
ns
Da
Da + 1
Da + 2
Da + n
OE#
A/DQ0:
A/DQ15
A16:
A20
Aa
AVD#
RDY
CLK
CE#
tCES
tAVDS
tACS
tAVDS
tAVDO
tACH
tBACC
tOE
tRACC
tRDYS
tOEZ
tCEZ
tIACC
tBDH
Aa
5 cycles for initial access shown.
Programmable wait state function is set to 01h.
1 cycle
wait state
when PS
enabled
25 ns typ.
Hi-Z
Hi-Z
Hi-Z



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