1

Transistor

2SA1034, 2SA1035

Silicon PNP epitaxial planer type

For low-frequency and low-noise amplification

Complementary to 2SC2405 and 2SC2406

q

Low noise voltage NV.

q

q

Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Parameter

Collector to

base voltage

Collector to

emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

Ratings

–35

–55

–35

–55

–5

–100

–50

200

150

–55 ~ +150

Unit

V

V

V

mA

mA

mW

˚C

˚C

2SA1034

2SA1035

2SA1034

2SA1035

Parameter

Collector cutoff current

Collector to base

voltage

Collector to emitter

voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter voltage

Transition frequency

Noise voltage

Symbol

*1

NV

Conditions

*2

*2

min

–35

–55

–35

–55

–5

180

typ

– 0.7

200

max

–100

–1

700

– 0.6

–1.0

150

Unit

nA

µA

V

V

V

V

V

MHz

mV

Rank

R

S

T

180 ~ 360

260 ~ 520

360 ~ 700

2SA1034

FR

FS

FT

2SA1035

HR

HS

HT

Marking symbol :

Unit: mm

1:Base

JEDEC:TO–236

2:Emitter

EIAJ:SC–59

3:Collector

Mini Type Package

2.8

+0.2

–0.3

1.5

+0.25

–0.05

0.65

±0.15

0.65

±0.15

3

1

2

0.4

±0.2

0.1 to 0.3

Marking

Symbol

2SA1034

2SA1035

2SA1034

2SA1035