Transistors

1

2SA2021

Silicon PNP epitaxial planer type

For general amplification

Complementary to 2SC5609

I Features

• High foward current transfer ratio h

FE

• SSS-mini type package, allowing downsizing and thinning of the

equipment and automatic insertion through the tape packing

I Absolute Maximum Ratings T

a

= 25°C

Unit: mm

Parameter

Symbol

Rating

Unit

Collector to base voltage

−60

V

Collector to emitter voltage

−50

V

Emitter to base voltage

−7V

Peak collector current

−200

mA

Collector current

−100

mA

Collector power dissipation

100

mW

Junction temperature

125

°C

Storage temperature

−55 to +125

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector cutoff current

= −20 V, I

E

= 0

− 0.1

µA

= −10 V, I

B

= 0

−100

µA

Collector to base voltage

−60

V

Collector to emitter voltage

= −100 µA, I

B

= 0

−50

V

Emitter to base voltage

= −10 µA, I

C

= 0

−7V

Forward current transfer ratio

180

390

Collector to emitter saturation voltage

= −100 mA, I

B

= −10 mA

− 0.3

− 0.5

V

Collector output capacitance

= −10 V, I

E

= 0, f = 1 MHz

2.7

pF

Transition frequency

80

MHz

I Electrical Characteristics T

a

= 25°C ± 3°C

Marking Symbol: 3E

1: Base

2: Emitter

3: Collector

SSS Mini Type Package (3-pin)

0.33

(0.40)

(0.40)

12

3

5˚

+0.05

–0.02

0.10

+0.05

–0.02

0.23

+0.05

–0.02