2SA921 datasheet(1/2 Pages) PANASONIC

Part #	2SA921

Description	Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)

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Manufacturer	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

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Transistor

2SA921

Silicon PNP epitaxial planer type

For high breakdown voltage low-noise amplification

Complementary to 2SC1980

s Features

q

High collector to emitter voltage VCEO.

q

Low noise voltage NV.

s Absolute Maximum Ratings (Ta=25˚C)

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Emitter

2:Collector

3:Base

JEDEC:TO–92

EIAJ:SC–43A

5.0

±0.2

4.0

±0.2

0.45

+0.2

–0.1

0.45

+0.2

–0.1

1.27

2.54

±0.15

2

13

Symbol

VCBO

VCEO

VEBO

ICP

IC

PC

Tj

Tstg

Ratings

–120

–5

–50

–20

250

150

–55 ~ +150

Unit

V

mA

mW

˚C

s Electrical Characteristics (Ta=25˚C)

Parameter

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Transition frequency

Noise voltage

Symbol

ICBO

ICEO

VCBO

VCEO

VEBO

hFE

*

VCE(sat)

fT

NV

Conditions

VCB = –50V, IE = 0

VCE = –50V, IB = 0

IC = –10µA, IE = 0

IC = –1mA, IB = 0

IE = –10µA, IC = 0

VCE = –5V, IC = –2mA

IC = –20mA, IB = –2mA

VCB = –5V, IE = 2mA, f = 200MHz

VCE = –40V, IC = –1mA, GV = 80dB

Rg = 100kΩ, Function FLAT

min

–120

–5

180

typ

200

max

–100

–1

520

– 0.6

150

Unit

nA

µA

V

MHz

mV

*h

FE Rank classification

Rank

R

S

hFE

180 ~ 360

260 ~ 520

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