Features

• Single chip for driving high/low side MOSFETs /

IGBTs

• High to low side isolation of 600V

• Common-mode dv/dt immunity of greater than

50V/nanosecond

• Undervoltage lockout

• Optimized power circuit layout

• High side bootstrap supply

• Sockets for freewheeling fast recovery diodes

(FREDS)

• Flexibility of power level utilization

• 5V compatible HCMOS input logic with hysterisis

• Protection from cross conduction of the half

bridge

• Simple, fast and low cost means of evaluation

and design

• Option for using IXDP630 with RC oscillator or

IXDP631 with crystal oscillator for improved dead

time accuracy.

• Three phase operation with the ability to attach

additional slave driver boards.

First Release

Copyright © IXYS CORPORATION 2003

Introduction

The EV6R11 KIT implements a single power phase-leg

HALF BRIDGE DRIVER CHIPSET - IX6R11and IXDP630

dead time generator. This evaluation board includes an

assembled and tested PCB with two power devices. Just

follow the instructions in this document and connect the

board to the load and power.

Any power circuit is layout sensitive. The layout of this

PCB is a proven, working layout. The designer is invited

to duplicate this layout in his system, following the

evaluation of the driver chipset.

Most systems vary in their power level requirements and

therefore the power devices used. Due to this fact and

fluctuations in availability of power devices, the kit will not

always include the same power devices. The designer is

encouraged to use the power devices that are required for

his system. The devices that are enclosed serve only for

initialevaluation.

IX6R11 HALF BRIDGE DRIVER Evaluation Board

EV6R11

Figure 1: EV6R11 Assembled PCB With S3 Package