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ISO6721 Datasheet(PDF) 18 Page - Texas Instruments

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Part # ISO6721
Description  ISO672x-Q1 General Purpose Reinforced and Basic Dual-Channel Digital Isolators with Robust EMC
PDF  48 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

ISO6721 Datasheet(HTML) 18 Page - Texas Instruments

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8.3 Feature Description
The ISO672x-Q1 family of devices is available in two channel configurations and default output state options to
enable a variety of application uses. Table 8-1 lists the device features of the ISO672x-Q1 devices.
Table 8-1. Device Features
PART NUMBER
MAXIMUM DATA
RATE
CHANNEL DIRECTION
DEFAULT OUTPUT
STATE
PACKAGE
RATED ISOLATION(1)
ISO6720-Q1
50 Mbps
2 Forward, 0 Reverse
High
DWV-8
5000 VRMS / 7071 VPK
ISO6720F-Q1
50 Mbps
2 Forward, 0 Reverse
Low
DWV-8
5000 VRMS / 7071 VPK
ISO6721-Q1
50 Mbps
1 Forward, 1 Reverse
High
DWV-8
5000 VRMS / 7071 VPK
ISO6721B-Q1
50 Mbps
1 Forward, 1 Reverse
High
D-8
3000 VRMS / 4242 VPK
ISO6721F-Q1
50 Mbps
1 Forward, 1 Reverse
Low
DWV-8
5000 VRMS / 7071 VPK
ISO6721FB-Q1
50 Mbps
1 Forward, 1 Reverse
Low
D-8
3000 VRMS / 4242 VPK
(1)
See Section 6.8 for detailed isolation ratings.
8.3.1 Electromagnetic Compatibility (EMC) Considerations
Many applications in harsh industrial environment are sensitive to disturbances such as electrostatic discharge
(ESD), electrical fast transient (EFT), surge and electromagnetic emissions. These electromagnetic disturbances
are regulated by international standards such as IEC 61000-4-x and CISPR 25 . Although system-level
performance and reliability depends, to a large extent, on the application board design and layout, the ISO672x-
Q1 family of devices incorporates many chip-level design improvements for overall system robustness. Some of
these improvements include:
• Robust ESD protection cells for input and output signal pins and inter-chip bond pads.
• Low-resistance connectivity of ESD cells to supply and ground pins.
• Enhanced performance of high voltage isolation capacitor for better tolerance of ESD, EFT and surge events.
• Bigger on-chip decoupling capacitors to bypass undesirable high energy signals through a low impedance
path.
• PMOS and NMOS devices isolated from each other by using guard rings to avoid triggering of parasitic
SCRs.
• Reduced common mode currents across the isolation barrier by ensuring purely differential internal operation.
ISO6720-Q1, ISO6721-Q1
SLLSFF5A – JULY 2020 – REVISED DECEMBER 2020
www.ti.com
18
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Copyright © 2020 Texas Instruments Incorporated
Product Folder Links: ISO6720-Q1 ISO6721-Q1



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