I

t

n

e

rr

u

C

e

g

a

k

a

e

L

y

d

o

B

-

e

t

a

G

GSS

-

-

±100

nA

V

e

g

a

tl

o

V

d

l

o

h

s

e

r

h

T

e

t

a

G

GS(th)

1.2

1.8

2.5

V

Drain-Source On-State Resistance

-

210

240

mΩ

g

e

c

n

a

t

c

u

d

n

o

c

s

n

a

r

T

d

r

a

w

r

o

F

FS

1

-

-

S

C

e

c

n

a

ti

c

a

p

a

C

t

u

p

n

I

lss

F

P

-

0

9

1

-

C

e

c

n

a

ti

c

a

p

a

C

t

u

p

t

u

O

oss

F

P

-

2

2

-

C

e

c

n

a

ti

c

a

p

a

C

r

e

f

s

n

a

r

T

e

s

r

e

v

e

R

rss

F=1.0MHz

-

13

-

PF

t

e

m

i

T

y

a

l

e

D

n

o

-

n

r

u

T

d(on)

S

n

-

6

-

t

e

m

i

T

e

s

i

R

n

o

-

n

r

u

T

r

S

n

-

0

1

-

t

e

m

i

T

y

a

l

e

D

ff

O

-

n

r

u

T

d(off)

S

n

-

0

1

-

t

e

m

i

T

ll

a

F

ff

O

-

n

r

u

T

f

-

6

-

nS

Q

e

g

r

a

h

C

e

t

a

G

l

a

t

o

T

g

C

n

2

.

5

-

Q

e

g

r

a

h

C

e

c

r

u

o

S

-

e

t

a

G

gs

C

n

-

5

7

.

0

-

Q

e

g

r

a

h

C

n

i

a

r

D

-

e

t

a

G

gd

-

1.4

-

nC

Drain-Source Diode Characteristics

-

-

1.2

V

-

-

2

A

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

FTK0102

2018. 05. 29

2/6

Revision No : 0