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FTK0905 Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # FTK0905
Description  100V P-Channel MOSFETs
PDF  5 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK0905 Datasheet(HTML) 2 Page - First Silicon Co., Ltd

  FTK0905 Datasheet HTML 1Page - First Silicon Co., Ltd FTK0905 Datasheet HTML 2Page - First Silicon Co., Ltd FTK0905 Datasheet HTML 3Page - First Silicon Co., Ltd FTK0905 Datasheet HTML 4Page - First Silicon Co., Ltd FTK0905 Datasheet HTML 5Page - First Silicon Co., Ltd  
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100V P-Channel MOSFETs
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-100
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
---
---
V/℃
IDSS
Drain-Source Leakage Current
VDS=-100V , VGS=0V , TJ=25℃
---
---
-1
uA
VDS=-80V , VGS=0V , TJ=125℃
---
---
-10
uA
IGSS
Gate-Source Leakage Current
VGS=± 20V , VDS=0V
---
---
±
100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V , ID=-5A
---
170
210
mΩ
VGS=-4.5V , ID=-2A
---
190
230
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =-250uA
-1
---
-3
V
gfs
Forward Transconductance
VDS=10V , ID=-3A
---
7
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge
VDS=-80V , VGS=-10V , ID=-5A
---
20
40
nC
Qgs
Gate-Source Charge
---
3.5
7
Qgd
Gate-Drain Charge
---
4.6
9
Td(on)
Turn-On Delay Time
VDD=-50V , VGS=-10V , RG=25Ω
ID=-5A
---
18
36
ns
Tr
Rise Time
---
8
16
Td(off)
Turn-Off Delay Time
---
100
200
Tf
Fall Time
---
30
60
Ciss
Input Capacitance
VDS=-25V , VGS=0V , F=1MHz
---
1419
2500
pF
Coss
Output Capacitance
---
89
170
Crss
Reverse Transfer Capacitance
---
45
90
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
16
---
Ω
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
-10
A
ISM
Pulsed Source Current
---
---
-20
A
VSD
Diode Forward Voltage
VGS=0V , IS=-1A , TJ=25℃
---
---
-1.2
V
trr
Reverse Recovery Time2
VGS=0V,IS=-5A , dI/dt=100A/µs
TJ=25℃
---
26.6
---
ns
Qrr
Reverse Recovery Charge2
---
24.2
---
uC
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
3.
Essentially independent of operating temperature.
Electrical Characteristics (TJ=25℃, unless otherwise noted)
Drain-Source Diode Characteristics and Maximum Ratings
2020. 07. 17
2/5
Revision No : 0
FTK0905



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