100V N-Channel MOSFETs

Symbol

Parameter

Rating

Units

Drain-Source Voltage

100

V

Gate-Sou

rce Voltage

+20 / -12

V

42

A

26.5

A

168

A

EAS

211

mJ

IAS

65

A

37

W

Power Dissipation – Derate above 25℃

0.3

W/℃

Storage Temperature Range

-50 to 150

℃

Operating Junction Temperature Range

-50 to 150

℃

BVDSS

RDSON

ID

100V

9.2m

Ω

42A

Symbol

Parameter

Typ.

Max.

Unit

Thermal Resistance Junction to ambient

---

62

℃/W

Thermal Resistance Junction to Case

---

3.3

℃/W

These N-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.



 Improved dv/dt capability

 Fast switching

 100% EAS Guaranteed

 Green Device Available

General Description

Features

Applications

Thermal Characteristics

 Networking

 Load Switch

 LED applications

 Quick Charger

TO-220F Pin Configuration

D

G

S

1

1. Gate

2. Drain

3. Source

3

2

2018. 11. 26

1/5

Revision No : 0

SEMICONDUCTOR

TECHNICAL DATA

FTK0976F

100V,42A, RDS(ON) =9.2m

Ω@VGS = 10V