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FTK2102 Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # FTK2102
Description  20V N-Channel Enhancement-Mode MOSFET
PDF  2 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK2102 Datasheet(HTML) 2 Page - First Silicon Co., Ltd

  FTK2102 Datasheet HTML 1Page - First Silicon Co., Ltd FTK2102 Datasheet HTML 2Page - First Silicon Co., Ltd  
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2014. 03. 27
2/2
FTK2102
Revision No : 0
Electrical characteristics (Ta=25
℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-source breakdown voltage
(BR)DSS
VGS = 0V, ID =10µA
20
Gate-threshold voltage
GS(th)
VDS =VGS, ID =50µA
0.65
0.95
1.2
V
I
e
g
a
k
a
e
l
y
d
o
b
-
e
t
a
G
GSS
VDS =0V, VGS =±8V
±100
nA
Zero gate voltage drain current
DSS
VDS =20V, VGS =0V
1
µA
VGS =4.5V, ID =3.6A
0.045
0.060
Drain-source on-resistance 1
RDS(on)
VGS =2.5V, ID =3.1A
0.070
0.115
Ω
Forward transconductance 1
gfs
VDS =5V, ID =3.6A
8
S
Diode forward voltage
SD
IS=0.94A,VGS=0V
0.76
1.2
V
Dynamic Characteristics
Q
e
g
r
a
h
c
e
t
a
g
l
a
t
o
T
g
4.0
10
Q
e
g
r
a
h
c
e
c
r
u
o
s
-
e
t
a
G
gs
0.65
Q
e
g
r
a
h
c
n
i
a
r
d
-
e
t
a
G
gd
VDS =10V,VGS =4.5V,ID =3.6A
1.5
nC
Input capacitance 2
Ciss
300
Output capacitance 2
Coss
120
Reverse transfer capacitance2
Crss
VDS =10V,VGS =0V,f=1MHz
80
pF
Switching Characteristics2
t
e
m
i
t
y
a
l
e
d
n
o
-
n
r
u
T
d(on)
7
15
t
e
m
i
t
e
s
i
R
r
55
80
t
e
m
i
t
y
a
l
e
d
f
f
o
-
n
r
u
T
d(off)
16
60
t
e
m
i
t
ll
a
F
f
VDD=10V,
RL=5.5Ω, ID
VGEN=4.5V,Rg=6Ω
10
25
ns
Notes :
1.
Pulse Test : Pulse width≤ 300µs, duty cycle≤2%.
2.
These parameters have no way to verify.
V
V
V
I
=3.6A,



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