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PHT6N06LT Datasheet(PDF) 3 Page - VBsemi Electronics Co.,Ltd

Part # PHT6N06LT
Description  N-Channel 60-V (D-S) MOSFET
PDF  8 Pages
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Manufacturer  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

PHT6N06LT Datasheet(HTML) 3 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
4
6
8
10
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
VGS =10thru 5 V
VGS = 3.5 V
VGS = 4V
VGS =2.5 V
0
0.00
0.00
0.00
9
0.01
0.0
0.01
0.01
0
6
12
18
24
30
ID - Drain Current (A)
VGS = 10 V
VGS = 4 .5 V
0.01
0
2
4
6
8
10
0
5
10
15
20
25
ID = 6.3 A
Qg - Total Gate Charge (nC)
VDS = 16 V
VDS = 10 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
VGS - Gate-to-Source Voltage (V)
TC = 25 °C
TC = 125 °C
TC = - 55 °C
Crss
0
200
400
600
800
1
000
0
15
30
45
60
Ciss
VDS - Drain-to-Source Voltage (V)
Coss
0.6
0.8
1.0
1.2
1.4
1.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
VGS = 4.5 V, 10 V
ID = 6.3 A
8
7
0
11
2
3
4
PHT6N06LT
3
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw



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