STB24N60M6 datasheet(4/16 Pages) STMICROELECTRONICS

Part #	STB24N60M6

Description	N-channel 600 V, 162 mΩ typ., 17 A, MDmesh™M6 Power MOSFET in a D²PAK

PDF	16 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 16 page

Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM(1)

Source-drain current (pulsed)

52.5

VSD(2)

Forward on voltage

ISD = 17 A, VGS = 0 V

1.6

trr

Reverse recovery time

ISD = 17 A, di/dt = 100 A/µs,

VDD = 60 V

(see Figure 15. Test circuit for

inductive load switching and diode

recovery times)

225

Qrr

Reverse recovery charge

2.3

µC

IRRM

Reverse recovery current

20.4

trr

Reverse recovery time

ISD = 17 A, di/dt = 100 A/µs,

VDD = 60 V,

Tj = 150 °C

(see Figure 15. Test circuit for

inductive load switching and diode

recovery times)

387

Qrr

Reverse recovery charge

3.85

µC

IRRM

Reverse recovery current

25.1

1. Pulse width is limited by safe operating area.

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

STB24N60M6

Electrical characteristics

DS12729 - Rev 1

page 4/16

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