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STD12N60DM6 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STD12N60DM6
Description  N-channel 600 V, 345 mΩ typ., 10 A MDmesh DM6 Power MOSFET in a DPAK package
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD12N60DM6 Datasheet(HTML) 1 Page - STMicroelectronics

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1
3
TAB
2
DPAK
D(2, TAB)
G(1)
S(3)
AM01476v1_tab
Features
Order code
VDS
RDS(on) max.
ID
STD12N60DM6
600 V
390 mΩ
10 A
•
Fast-recovery body diode
•
Lower RDS(on) per area vs previous generation
•
Low gate charge, input capacitance and resistance
•
100% avalanche tested
•
Extremely high dv/dt ruggedness
•
Zener-protected
Applications
•
Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-
recovery diode series. Compared with the previous MDmesh fast generation, DM6
combines very low recovery charge (Qrr), recovery time (trr) and excellent
improvement in RDS(on) per area with one of the most effective switching behaviors
available in the market for the most demanding high-efficiency bridge topologies and
ZVS phase-shift converters.
Product status link
STD12N60DM6
Product summary
Order code
STD12N60DM6
Marking
12N60DM6
Package
DPAK
Packing
Tape and reel
N-channel 600 V, 345 mΩ typ., 10 A MDmesh DM6 Power MOSFET
in a DPAK package
STD12N60DM6
Datasheet
DS13509 - Rev 1 - October 2020
For further information contact your local STMicroelectronics sales office.
www.st.com


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