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STM32WB55CCU6ATR Datasheet(PDF) 151 Page - STMicroelectronics |
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STM32WB55CCU6ATR Datasheet(HTML) 151 Page - STMicroelectronics |
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151 / 193 page ![]() DS11929 Rev 10 151/193 STM32WB55xx STM32WB35xx Electrical characteristics 169 Figure 29. ADC accuracy characteristics THD Total harmonic distortion Single ended Fast channel (max speed) - -71 -69 dB Slow channel (max speed) - -71 -69 Differential Fast channel (max speed) - -73 -72 Slow channel (max speed) - -73 -72 1. Guaranteed by design. 2. ADC DC accuracy values are measured after internal calibration. 3. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a Schottky diode (pin to ground) to analog pins that may potentially inject negative current. 4. The I/O analog switch voltage booster is enabled when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when VDDA < 2.4 V). It is disabled when VDDA ≥ 2.4 V. No oversampling. Table 82. ADC accuracy - Limited test conditions 4(1)(2)(3) (continued) Symbol Parameter Conditions(4) Min Typ Max Unit ET = Total unadjusted error: maximum deviation between actual and ideal transfer curves EO = Offset error: maximum deviation between the first actual transition and the first ideal one (1) Example of an actual transfer curve (2) Ideal transfer curve (3) End point correlation line 4095 4094 4093 7 6 5 4 3 2 1 2 345 6 1 7 4093 4094 4095 4096 1 LSB ideal (1) (3) (2) MS54001V1 VREF+/4096 EG = Gain error: deviation between the last ideal transition and the last actual one ED = Differential linearity error: maximum deviation between actual steps and the ideal ones EL = Integral linearity error: maximum deviation between any actual transition and the end point correlation line ED EO ET EL EG |
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