STM32WB55CCQ7ATR datasheet(97/193 Pages) STMICROELECTRONICS

97 / 193 page

DS11929 Rev 10

97/193

STM32WB55xx STM32WB35xx

Electrical characteristics

169

VPVD3

PVD threshold 3

Rising edge

2.56

2.61

2.66

Falling edge

2.47

2.52

2.57

VPVD4

PVD threshold 4

Rising edge

2.69

2.74

2.79

Falling edge

2.59

2.64

2.69

VPVD5

PVD threshold 5

Rising edge

2.85

2.91

2.96

Falling edge

2.75

2.81

2.86

VPVD6

PVD threshold 6

Rising edge

2.92

2.98

3.04

Falling edge

2.84

2.90

2.96

Vhyst_BORH0

Hysteresis voltage of BORH0

Hysteresis in

continuous mode

-20

Hysteresis in

other mode

-30

Vhyst_BOR_PVD

Hysteresis voltage of BORH (except

BORH0) and PVD

100

IDD (BOR_PVD)(2)

BOR(3) (except BOR0) and PVD

consumption from VDD

1.1

1.6

µA

VPVM1

VDDUSB peripheral voltage monitoring

1.18

1.22

1.26

VPVM3

VDDA peripheral voltage monitoring

Rising edge

1.61

1.65

1.69

Falling edge

1.6

1.64

1.68

Vhyst_PVM3

PVM3 hysteresis

Vhyst_PVM1

PVM1 hysteresis

IDD (PVM1)(2)

PVM1 consumption from VDD

0.2

µA

IDD (PVM3)(2)

PVM3 consumption from VDD

1. Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power sleep modes.

2. Guaranteed by design.

3. BOR0 is enabled in all modes (except shutdown) and its consumption is therefore included in the supply current

characteristics tables.

Table 35. Embedded reset and power control block characteristics (continued)

Symbol

Parameter

Conditions(1)

Min

Typ

Max

Unit

STM32WB55CCQ7ATR Datasheet(PDF) 97 Page - STMicroelectronics

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