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CS50N06 Datasheet(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part # CS50N06
Description  N-Channel MOSFET uses advanced trench technology
PDF  5 Pages
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Manufacturer  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

CS50N06 Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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—
2 —
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
60
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V,VDS=60V,(TC=25℃)
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±25V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
2
---
4
V
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=40A
---
11.5
15
mΩ
GFS
Forward Transconductance
VDS =10V, ID=15A
18
---
---
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS=25V, VGS=0V, f=1MHz
---
1717
---
pF
Coss
Output Capacitance
---
180
---
Crss
Reverse Transfer Capacitance
---
140
---
Switching Characteristics
td(on)
Turn-On Delay Time
VDS=30V,RL=2.5Ω
VGS=10V,RG=3Ω
---
15
---
ns
tr
Rise Time
---
25
---
ns
td(off)
Turn-Off Delay Time
---
50
---
ns
tf
Fall Time
---
23
---
ns
Qg
Total Gate Charge
VGS=10V, VDS=30V,
ID=15A
---
50
---
nC
Qgs
Gate-Source
Charge
---
12
---
nC
Qgd
Gate-Drain “Miller” Charge
---
23
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
1
TJ=25℃,ISD=1A,VGS=0V
---
0.85
0.99
V
CS50N06
Electrical Characteristics：(T
C=25℃ unless otherwise noted)



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