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STTH1002CSFY Datasheet(PDF) 5 Page - STMicroelectronics |
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STTH1002CSFY Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 10 page ![]() Figure 7. Reverse recovery charges versus dIF/dt (typical values, per diode) 0 40 80 120 160 200 0 100 200 300 400 500 QRR(nC) dIF/dt(A/µs) V R = 160 V T j = 125 °C I F = IF(AV) Figure 8. Reverse recovery softness versus dIF/dt (typical values, per diode) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 100 200 300 400 500 S FACTOR dIF/dt(A/µs) V R = 160 V T j = 125 °C I F = IF(AV) Figure 9. Relative variations of dynamic parameters versus junction temperature 0.0 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 Tj(°C) V R = 160 V I F = IF(AV) Reference: T j = 125 °C I RM Q RR S FACTOR Figure 10. Junction capacitance versus reverse voltage applied (typical values, per diode) 1 10 100 1 10 100 1000 C(pF) F = 1 MHz V osc= 30 mVRMS T j = 25 °C VR(V) Figure 11. Thermal resistance junction to ambient versus copper surface under tab (typical values, epoxy printed board FR4, eCu = 70 µm) (PSMC (TO-277A)) 0 20 40 60 80 100 120 0 1 2 3 4 5 6 7 8 9 10 SCU(cm²) Epoxy printed circuit board, copper thickness = 70 µm Rth(j-a)(°C/W) PSMC (TO-277A) STTH1002CSFY Characteristics (curves) DS13536 - Rev 1 page 5/10 |
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