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Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-

duty cycle operations.

Thermal Characteristics

Note:

3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Symbol

Parameter

Value

Unit

Drain-Gate Voltage

-30

V

Gate-Source Voltage

30

V

Forward Gate Current

50

mA

Operating and Storage Junction Temperature Range

-55 to + 150

°C

Symbol

Parameter

Max.

Unit

MMBFJ175 /

MMBFJ176 /

Total Device Dissipation

350

225

mW

Derate Above 25

°C2.8

1.8

mW/

°C

Thermal Resistance, Junction to Case

125

°C/W

Thermal Resistance, Junction to Ambient

357

556

°C/W