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2N7000 Datasheet(PDF) 5 Page - Microchip Technology |
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2N7000 Datasheet(HTML) 5 Page - Microchip Technology |
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5 / 14 page ![]() 2021 Microchip Technology Inc. DS20005695A-page 5 2N7000 FIGURE 2-7: BVDSS Variation with Temperature. FIGURE 2-8: Transfer Characteristics. FIGURE 2-9: Capacitance vs. Drain-to-Source Voltage. FIGURE 2-10: On-Resistance vs. Drain Current. FIGURE 2-11: VGS(th) and RDS Variation with Temperature. FIGURE 2-12: Gate Drive Dynamic Characteristics. -50 0 50 100 150 1.1 1.0 0.9 T J ( OC) 0 2 4 6 8 10 2.5 2.0 1.5 1.0 0.5 0 T A = -55 OC 25OC V GS (volts) V DS = 25V 125OC 100 75 50 25 0 0 10 20 30 40 f = 1MHz C ISS C OSS C RSS V DS (volts) 0 0.5 1.0 1.5 2.0 2.5 V GS = 4.5V 5.0 4.0 3.0 2.0 1.0 0 I D (amperes) V GS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 V (th) @ 1.0mA 1.9 1.6 1.3 1.0 0.7 0.4 R DS @ 10V, 1.0A T j ( OC) -50 0 50 100 150 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1.0 V DS = 10V 40 pF 40V 80 pF Q G (nanocoulombs) |
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