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DTC144EE Datasheet(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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DTC144EE Datasheet(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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2 / 5 page ![]() Device Marking & Resistor Values: Device Marking R1 (KΩ) R2 (KΩ) DTC114EE 24 10 10 DTC124EE 25 22 22 DTC144EE 26 47 47 DTC114YE 64 10 47 DTC114TE 04 10 ∞ DTC143TE 03 4.7 ∞ DTC123EE 22 2.2 2.2 DTC143EE 23 4.7 4.7 DTC143ZE E23 4.7 47 DTC124XE 45 22 47 DTC123JE E42 2.2 47 Electrical Characteristics (T A = 25°C unless otherwise noted) Off Characteristics Symbol Parameter Test Condition Limits Unit Min Typ Max ICBO Collector-Base Cutoff Current VCB =50V, IE =0A - - 100 nA ICEO Collector-Emitter Cutoff Current VCE =50V, IB =0A - - 500 nA IEBO Emitter-Base Cutoff Current DTC114EE DTC124EE DTC144EE DTC114YE DTC114TE DTC143TE DTC123EE DTC143EE DTC143ZE DTC124XE DTC123JE VEB =6.0V, IC =0A - - - - - - - - - - - - - - - - - - - - - - 0.50 0.20 0.10 0.20 0.90 1.90 2.30 1.50 0.18 0.13 0.20 mA V(BR)CBO Collector-Base Breakdown Voltage IC =10uA, IE =0A 50 - - Volts V(BR)CEO Collector-Emitter Breakdown Voltage (Note 1) IC =2.0mAA, IB =0A 50 - - Volts Note 1: Pulse Test. Pulse width <300us, Duty cycle < 2.0%) DTC144EE Rev : www.leiditech.com 01.06.2018 2/5 |
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