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LM2N60CP Datasheet(PDF) 3 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Part # LM2N60CP
Description  N-Channel Enhancement Mode Power MOSFET
PDF  7 Pages
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Manufacturer  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Direct Link  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LM2N60CP Datasheet(HTML) 3 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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On-Characteristics
Parameter
Symbol
Tests Conditions
Min
Type
Max
Unit
Gate Threshold Voltage
VGS(th)
VDS = VGS , ID=250μA
2.0
-
4.0
V
Static Drain-Source On-Resistance
RDS(ON)
VGS =10V , ID=1.0A
-
3.5
4.5
Ω
Forward Transconductance
gfs
VDS = 40V, ID=1.0A（note4）
-
2.0
-
S
Dynamic Characteristics
Parameter
Symbol
Tests Conditions
Min
Type
Max
Unit
Input capacitance
Ciss
VDS=25V, VGS =0V, f=1.0MHz
-
380
480
pF
Output capacitance
Coss
-
40
52
pF
Reverse transfer capacitance
Crss
-
6
8
pF
Switching Characteristics
Parameter
Symbol
Tests Conditions
Min
Type
Max
Unit
Turn-On delay time
td(on)
VDD=300V, ID=2A, RG=25Ω
（
note 4，5）
-
16
40
ns
Turn-On rise time
tr
-
50
110
ns
Turn-Off delay time
td(off)
-
40
80
ns
Turn-Off Fall time
tf
-
45
95
ns
Total Gate Charge
Qg
VDS =480V , ID=2A, VGS =10V
（
note 4，5）
-
10
14
nC
Gate-Source charge
Qgs
-
2.1
-
nC
Gate-Drain charge
Qgd
-
5.5
-
nC
Drain-Source Diode Characteristics and Maximum Ratings
Parameter
Symbol
Tests Conditions
Min
Type
Max
Unit
Maximum Continuous Drain-Source Diode
Forward Current
IS
-
-
2
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
-
-
8
A
Drain-Source Diode Forward Voltage
VSD
VGS=0V, IS=2A
-
-
1.4
V
Reverse recovery time
trr
VGS=0V, IS=2A
dIF/dt=100A/μs (note 4)
-
260
-
ns
Reverse recovery charge
Qrr
-
1.2
-
μC
LM2N60CP
Rev :
www.leiditech.com
01.06.2018
3/7



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