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LM0130 Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Part # LM0130
Description  N-Channel Enhancement Mode Power MOSFET
PDF  4 Pages
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Manufacturer  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Direct Link  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LM0130 Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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Features
Package Dimensions
·Low On resistance.
·10V drive.
·RoHS compliant.
Specifications
Absolute Maximum Ratings at Ta=25
0C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
100
V
Gate-to-Source Voltage
VGSS
+20
V
Drain Current (DC)
ID
30
A
Drain Current (Pulse)
IDP
PW≤10uS, duty cycle≤1%
70
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (1000mm
2×0.8mm) 1unit
75
W
Single pulse avalanche energy
EAS
256
mJ
Channel Temperature
Tch
150
0C
Storage Temperature
Tstg
-55~+150
0C
Electrical Characteristics at Ta=25
0C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=250uA, VGS=0V
100
-
-
V
Zero-Gate Voltage Drain Current
IDSS
VDS=100V, VGS=0V
-
-
1
uA
Gate-to-Source Leakage Current
IGSS
VGS=+20V, VDS=0V
-
-
+100
nA
Gate Threshold Voltage
VGS(th)
VDS= VGS, ID=250uA
2
3
4
V
Static Drain-to-Source On-State Resistance
RDS(ON)
ID=15A, VGS=10V
-
24
28
mΩ
Input Capacitance
Ciss
VDS=25V, VGS=0V, f=1MHz
-
2000
-
pF
Output Capacitance
Coss
VDS=25V, VGS=0V, f=1MHz
-
300
-
pF
Reverse Transfer Capacitance
Crss
VDS=25V, VGS=0V, f=1MHz
-
250
-
pF
TO-220 TO-252
LM0130
N-Channel Enhancement Mode Power MOSFET
Rev :
www.leiditech.com
01.06.2017
1/4


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