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FTK4822 Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FTK4822 Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 4 page  FTK4822 2011. 11. 21 1/4 SEMICONDUCTOR TECHNICAL DATA Revision No : 0 N-channel N-channel Schematic diagram G 1 S 1 G 2 S 2 4 1 D 1 D 1 D 2 D 2 5 8 4 822 Marking and pin Assignment SOP-8 top view 2 3 6 7 Dual N-Channel MOSFET DESCRIPTION The FTK4822 uses advanced trench te chnology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Maximum ratings (Ta=25 ℃ unless otherwise noted) l o b m y S r e t e m a r a P Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (t ≤10s I ) 1 e t o n ( ) D 8.5 A Pulsed Drain Current (note 2) IDM 30 A Power Dissipation PD 1.4 W Thermal Resistance from Junction to Ambient (t ≤10s) (note 1) RθJA 89 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ VDS (V) = 30V ID = 8.5A (VGS = 10V) RDS(ON) < 16mΩ (VGS = 10V) RDS(ON) < 26mΩ (VGS = 4.5V) FEATURES |
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